FDC6306P دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FDC6306P
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حجم فایل
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70.016
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDC6306P
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Power Dissipation (Pd):
-
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Total Gate Charge (Qg@Vgs):
-
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Drain Source Voltage (Vdss):
-
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Input Capacitance (Ciss@Vds):
-
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Continuous Drain Current (Id):
-
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Gate Threshold Voltage (Vgs(th)@Id):
-
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
-
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Package:
TSOT-23-6
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Manufacturer:
onsemi
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Series:
PowerTrench®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 P-Channel (Dual)
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
20V
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Current - Continuous Drain (Id) @ 25°C:
1.9A
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Rds On (Max) @ Id, Vgs:
170mOhm @ 1.9A, 4.5V
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Vgs(th) (Max) @ Id:
1.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds:
441pF @ 10V
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Power - Max:
700mW
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
SOT-23-6 Thin, TSOT-23-6
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Supplier Device Package:
SuperSOT™-6
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Base Part Number:
FDC6306
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detail:
Mosfet Array 2 P-Channel (Dual) 20V 1.9A 700mW Surface Mount SuperSOT™-6
